Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels
نویسندگان
چکیده
We present a comprehensive computational toolset for low-field mobility modeling in nano-scaled SOI channels. The dimension-independent methodology allows us to treat planar devices (MOS, UTB) and non-planar ones (Bulk/SOI-FinFET, Nanowire-FET) on equal footing. The method involves combining a selfconsistent Schrödinger-Poisson solution in the channel cross-section with a linearized Boltzmann transport model. Full numerical treatment of the scattering rates guarantees consistent results for all geometries. All scattering mechanisms relevant to the Si/SiGe material system are included and treated accurately.
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